FDN352AP mosfet equivalent, powertrench mosfet.
*
–1.3 A,
–30V
–1.1 A,
–30V RDS(ON) = 180 mΩ @ VGS =
–10V RDS(ON) = 300 mΩ @ VGS =
where low in-line power loss is needed in a very small outline surface mount package.
Applications
* Notebook compu.
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These.
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